Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors.

MLA

Jae-Sung Kim, et al. “Plasma Treatment Effect on Charge Carrier Concentrations and Surface Traps in A-InGaZnO Thin-Film Transistors.” Journal of Applied Physics, vol. 115, no. 11, Mar. 2014, pp. 114503-1-114503–06. EBSCOhost, https://doi.org/10.1063/1.4868630.

APA

Jae-Sung Kim, Min-Kyu Joo, Ming Xing Piao, Seung-Eon Ahn, Yong-Hee Choi, Ho-Kyun Jang, & Gyu-Tae Kim. (2014). Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors. Journal of Applied Physics, 115(11), 114503-1-114503–114506. https://doi.org/10.1063/1.4868630

Chicago

Jae-Sung Kim, Min-Kyu Joo, Ming Xing Piao, Seung-Eon Ahn, Yong-Hee Choi, Ho-Kyun Jang, and Gyu-Tae Kim. 2014. “Plasma Treatment Effect on Charge Carrier Concentrations and Surface Traps in A-InGaZnO Thin-Film Transistors.” Journal of Applied Physics 115 (11): 114503-1-114503–6. doi:10.1063/1.4868630.