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Dielectric Properties and Defect Chemistry of WO-Doped KNaNbO Ceramics.
- Source :
- Journal of Electronic Materials; Apr2014, Vol. 43 Issue 4, p1055-1061, 7p, 1 Chart, 6 Graphs
- Publication Year :
- 2014
-
Abstract
- The dielectric properties and conductivity behavior of WO-doped KNa NbO ceramics were investigated as a function of temperature (25°C to 600°C) and frequency (40 Hz to 10 Hz). The dielectric loss and direct-current (DC) conductivity of the ceramics depend strongly on the tungsten content. A high-temperature dielectric relaxation near temperature of 500°C was observed and analyzed using the semiempirical complex Cole-Cole equation. The activation energy of the dielectric relaxation was estimated to be ∼2 eV and increased with increasing WO. The frequency-dependent conductivity can be well described by the universal dielectric response law. The activation energy obtained from the DC conductivity changes from 0.93 eV to 1.49 eV. A possible mechanism for the high-temperature dielectric relaxation and conductivity is proposed based on the activation energy value and defect compensation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 43
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 95344691
- Full Text :
- https://doi.org/10.1007/s11664-013-2975-3