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Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory.
- Source :
- IEEE Electron Device Letters; May2014, Vol. 35 Issue 5, p530-532, 3p
- Publication Year :
- 2014
-
Abstract
- In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switching process except for the oxygen ions. Owing to the twofold chemical reaction, the high resistance states are randomly distributed in a wide range. Schottky emission can be obtained through conduction current fitting, and a reaction model is established to demonstrate the special behaviors of the two types of ions, which also clarifies the gradual change of current fitting results. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 35
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 95720796
- Full Text :
- https://doi.org/10.1109/LED.2014.2311295