Silver antimony Ohmic contacts to moderately doped n-type germanium.

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N_D = 1 × 10¹⁸ cm^-3) annealed at 400°C produces an Ohmic contact with a measured specific contact resistivity of (1:1±0.2) × 10^-5 Ω-cm². It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K. [ABSTRACT FROM AUTHOR]