Cite
Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism.
MLA
Yamada, Tatsuya, et al. “Improvement of Electrical Characteristics of Local BOX MOSFETs by Heavily Doped Structures and Elucidation of the Related Mechanism.” Journal of Computational Electronics, vol. 13, no. 2, June 2014, pp. 400–07. EBSCOhost, https://doi.org/10.1007/s10825-013-0549-5.
APA
Yamada, T., Nakajima, Y., Hanajiri, T., Toyabe, T., & Sugano, T. (2014). Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism. Journal of Computational Electronics, 13(2), 400–407. https://doi.org/10.1007/s10825-013-0549-5
Chicago
Yamada, Tatsuya, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, and Takuo Sugano. 2014. “Improvement of Electrical Characteristics of Local BOX MOSFETs by Heavily Doped Structures and Elucidation of the Related Mechanism.” Journal of Computational Electronics 13 (2): 400–407. doi:10.1007/s10825-013-0549-5.