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Field dependent emission rates in radiation damaged GaAs.
- Source :
- Journal of Applied Physics; 2014, Vol. 116 Issue 1, p013710-1-013710-7, 7p
- Publication Year :
- 2014
-
Abstract
- We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs. [ABSTRACT FROM AUTHOR]
- Subjects :
- TEMPERATURE
ELECTRIC fields
ELECTRONS
DOPED semiconductors
DIODES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 96969355
- Full Text :
- https://doi.org/10.1063/1.4885156