Cite
Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film.
MLA
Yang, S., et al. “Recombination Dynamics of a Localized Exciton Bound at Basal Stacking Faults within the M-Plane ZnO Film.” Applied Physics Letters, vol. 105, no. 1, July 2014, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.4887280.
APA
Yang, S., Hsu, H. C., Liu, W.-R., Lin, B. H., Kuo, C. C., Hsu, C.-H., Eriksson, M. O., Holtz, P. O., & Hsieh, W. F. (2014). Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film. Applied Physics Letters, 105(1), 1–5. https://doi.org/10.1063/1.4887280
Chicago
Yang, S., H. C. Hsu, W. -R. Liu, B. H. Lin, C. C. Kuo, C. -H. Hsu, M. O. Eriksson, P. O. Holtz, and W. F. Hsieh. 2014. “Recombination Dynamics of a Localized Exciton Bound at Basal Stacking Faults within the M-Plane ZnO Film.” Applied Physics Letters 105 (1): 1–5. doi:10.1063/1.4887280.