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Effect of Energetic Electron Irradiation on Graphene.
- Source :
- AIP Conference Proceedings; 12/2/2009, Vol. 1194 Issue 1, p140-144, 5p, 2 Diagrams, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- Electron beam exposure is a commonly used tool for fabrication and imaging of graphene-based devices. Using Raman spectroscopy and electronic transport measurements, we have studied the effect of prolonged exposure of electron beams on exfoliated graphene on SiO<subscript>2</subscript>/Si substrates and the performance of electronic devices based on exfoliated graphene. Raman spectra indicate emergence of characteristic defects. Electronic transport measurements show an overall decrease in graphene's conductivity and a shift of the Dirac point. Our results are valuable for understanding the possible defects generated in graphene by electron beam exposure and in high-radiation environment in general. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1194
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 97090920