Back to Search
Start Over
Trap-induced photoconductivity in singlet fission pentacene diodes.
- Source :
- Applied Physics Letters; 7/21/2014, Vol. 105 Issue 3, p1-4, 4p, 1 Diagram, 2 Graphs
- Publication Year :
- 2014
-
Abstract
- This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using currentvoltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate. [ABSTRACT FROM AUTHOR]
- Subjects :
- PHOTOCONDUCTIVITY
PENTACENE
ELECTRIC potential
DIODES
ELECTRIC admittance
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 105
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 97255528
- Full Text :
- https://doi.org/10.1063/1.4891331