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Trap-induced photoconductivity in singlet fission pentacene diodes.

Authors :
Xianfeng Qiao
Chen Zhao
Bingbing Chen
Lin Luan
Source :
Applied Physics Letters; 7/21/2014, Vol. 105 Issue 3, p1-4, 4p, 1 Diagram, 2 Graphs
Publication Year :
2014

Abstract

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using currentvoltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
105
Issue :
3
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
97255528
Full Text :
https://doi.org/10.1063/1.4891331