Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions.

In this paper, a compact model for the negative bias temperature instability (NBTI) is developed by considering the interface-state generation and the hole-trapping mechanisms. This model shows accurate reproduction of the threshold voltage (Vth) degradations measured from samples fabricated with different dielectric materials as well as processes. A total of eight model parameters are introduced for describing the different degradation origins. The parameter values are verified to exhibit universal properties as a function of the electrical field within the gate oxide (Eox). By implementing the universal NBTI model into the compact model HiSIM, the dynamic NBTI effect and circuit performance degradation can be predicted. [ABSTRACT FROM PUBLISHER]