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A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions.
- Source :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers; Sep2014, Vol. 61 Issue 9, p2634-2643, 10p
- Publication Year :
- 2014
-
Abstract
- Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 61
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 98013762
- Full Text :
- https://doi.org/10.1109/TCSI.2014.2332247