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Optimized dual temperature pulsed laser deposition of TiO2 to realize MTOS (metal-TiO2–SiO2–Si) capacitors with ultrathin gate dielectric.
- Source :
- Semiconductor Science & Technology; Jan2005, Vol. 20 Issue 1, p1-1, 1p
- Publication Year :
- 2005
-
Abstract
- In this work, metal-TiO<subscript>2</subscript>–SiO<subscript>2</subscript>–Si (MTOS) capacitors have been fabricated where the TiO<subscript>2</subscript> layers have been deposited by the pulsed laser deposition technique followed by annealing at different temperatures. MTOS devices with an effective dielectric thickness (EDT) as low as 1.6 nm and very low leakage current have been realized by using a two-step deposition process in which a buffer layer of TiO<subscript>2</subscript> has first been deposited at 300 °C. This was followed by deposition and annealing of TiO<subscript>2</subscript> at 750 °C. It has also been shown that the annealing temperature plays a significant role in determining the EDT of the dielectric film as well as the electrical characteristics of the MTOS capacitors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 20
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 98047623
- Full Text :
- https://doi.org/10.1088/0268-1242/20/1/006