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High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers.
- Source :
- Applied Physics Letters; 12/24/1990, Vol. 57 Issue 26, p2762, 2p
- Publication Year :
- 1990
-
Abstract
- Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR lasers
QUANTUM wells
GALLIUM arsenide semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 57
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9818427
- Full Text :
- https://doi.org/10.1063/1.103779