Quantum well AlxGa1-xAs-GaAs lasers with internal (Si2)x(GaAs)1-x barriers.

Data are presented showing that the alloy (Si2)x(GaAs)1-x can be formed in a GaAs quantum well (QW) and shifts the operation of an AlxGa1-xAs-GaAs QW laser to higher energy. The (Si2)x(GaAs)1-x barrier, which is formed by sheet deposition (metalorganic chemical vapor deposition) of Si on the initial portion of a GaAs QW layer and then by ‘‘capping’’ this with the remaining part of the QW, can be observed directly by transmission electron microscopy. [ABSTRACT FROM AUTHOR]