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Semiconducting/semi-insulating reversibility in bulk GaAs.

Authors :
Look, D. C.
Yu, P. W.
Theis, W. M.
Ford, W.
Mathur, G.
Sizelove, J. R.
Lee, D. H.
Li, S. S.
Source :
Applied Physics Letters; 10/27/1986, Vol. 49 Issue 17, p1083, 3p
Publication Year :
1986

Abstract

Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi-insulating (ρ∼107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature-dependent Hall-effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm-3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm-3 range, which means that the compensation is primarily determined by native defects, not impurities. A tentative model includes a donor at EC-0.13 eV, attributed to VAs-AsGa, and an acceptor at EV+0.07 eV, attributed to VGa-GaAs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
49
Issue :
17
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
9821197
Full Text :
https://doi.org/10.1063/1.97429