High-temperature microhardness of SiGe epitaxial layers grown on Ge and Si substrates.

Details

Language :

English

ISSN :

09538984

Volume :

14

Issue :

48

Database :

Complementary Index

Journal :

Journal of Physics: Condensed Matter

Publication Type :

Academic Journal

Accession number :

98239892

Full Text :

https://doi.org/10.1088/0953-8984/14/48/343