Back to Search
Start Over
High-power, high-brightness, phase-locked broad-stripe diode lasers.
- Source :
- Applied Physics Letters; 8/15/1988, Vol. 53 Issue 7, p555, 2p
- Publication Year :
- 1988
-
Abstract
- A novel superlinear graded index separate confinement laser diode structure is proposed. Single stripe diode lasers with 210 μm emitting aperture generate 3.2 W cw, and 6.3 W quasi-cw of light-output power in a phase-locked operation. The catastrophic optical density (30 W/mm) obtained for these lasers is better than that reported for devices with nonabsorbing mirrors. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR diodes
SEMICONDUCTOR lasers
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 53
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9827761
- Full Text :
- https://doi.org/10.1063/1.100397