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Broad-area tandem semiconductor laser.
- Source :
- Applied Physics Letters; 10/17/1988, Vol. 53 Issue 16, p1468, 3p
- Publication Year :
- 1988
-
Abstract
- A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-μm-wide apertures provided that the broad-area section is sufficiently long. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR lasers
QUANTUM wells
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 53
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9828433
- Full Text :
- https://doi.org/10.1063/1.99968