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Effect of Al mole fraction on electron emission at the AlxGa1-xAs/GaAs interface.
- Source :
- Applied Physics Letters; 10/16/1989, Vol. 55 Issue 16, p1656, 3p
- Publication Year :
- 1989
-
Abstract
- We report the first direct measurement of electron storage time at the AlxGa1-xAs/GaAs interface as a function of Al mole fraction x. Storage capacitors with x=0.4, 0.6, 0.8, and 1.0 were fabricated and their inversion layer electron retention times measured. The optimal mole fraction for electron retention is in the range 0.4≤x≤0.6. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 55
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9833031
- Full Text :
- https://doi.org/10.1063/1.102229