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Experimental determination of transparency current density and estimation of the threshold current of semiconductor quantum well lasers.
- Source :
- Applied Physics Letters; 3/12/1990, Vol. 56 Issue 11, p1002, 3p
- Publication Year :
- 1990
-
Abstract
- An experimental method for determining the transparency current density of semiconductor quantum well lasers is demonstrated in a strained-layer InGaAs/GaAs single quantum well laser system. The experimental results are then used as a practical guide to the study of ultralow threshold lasers. A threshold current as low as 0.75 mA is observed. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR lasers
QUANTUM wells
INDIUM compounds
GALLIUM arsenide semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 56
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9833771
- Full Text :
- https://doi.org/10.1063/1.102598