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Computational Analysis of the Vertical Bridgman Growth of Te Doped GaSb Under Microgravity.
- Source :
- Chinese Physics Letters; 10/1/2000, Vol. 17 Issue 10, p1-1, 1p
- Publication Year :
- 2000
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 17
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 98348308
- Full Text :
- https://doi.org/10.1088/0256-307X/17/10/027