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Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric.
- Source :
- Journal of Semiconductors; Sep2014, Vol. 35 Issue 9, p1-1, 1p
- Publication Year :
- 2014
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 35
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 98376662
- Full Text :
- https://doi.org/10.1088/1674-4926/35/9/094002