Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric.

Details

Language :

English

ISSN :

16744926

Volume :

35

Issue :

9

Database :

Complementary Index

Journal :

Journal of Semiconductors

Publication Type :

Academic Journal

Accession number :

98376662

Full Text :

https://doi.org/10.1088/1674-4926/35/9/094002