Study of p-type Porous Silicon.

Porous silicon fabricated by electrochemical etching was studied using Scanning Electron Microscope and Elemental Differential X ray Analyzer. The etched samples were found to emit red luminescence when exposed to ultraviolet light of wavelength 254 nm. Micrographs of the samples obtained by Scanning Electron Microscope showed a porous layer at the surface. Elemental Differential X ray Analysis provided the evidence of oxidation of a porous layer. Red luminescence emitted from the surface may be attributed to confinement of holes in the oxidized layer. [ABSTRACT FROM AUTHOR]