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Large, non-saturating magnetoresistance in WTe2.

Authors :
Ali, Mazhar N.
Flynn, Steven
Gibson, Quinn D.
Schoop, Leslie M.
Haldolaarachchige, Neel
Cava, R. J.
Xiong, Jun
Liang, Tian
Hirschberger, Max
Ong, N. P.
Tao, Jing
Source :
Nature; 10/9/2014, Vol. 514 Issue 7521, p205-208, 4p
Publication Year :
2014

Abstract

Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe<subscript>2</subscript>: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe<subscript>2</subscript>, will represent a significant new direction in the study of magnetoresistivity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00280836
Volume :
514
Issue :
7521
Database :
Complementary Index
Journal :
Nature
Publication Type :
Academic Journal
Accession number :
98774979
Full Text :
https://doi.org/10.1038/nature13763