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On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime.
- Source :
- Journal of Applied Physics; 2014, Vol. 116 Issue 13, p134502-1-134502-8, 8p, 1 Diagram, 10 Graphs
- Publication Year :
- 2014
-
Abstract
- In this article, we investigate extensively the bipolar-switching properties of Al<subscript>2</subscript>O<subscript>3</subscript>- and HfO<subscript>2</subscript>- based resistive-switching memory cells operated at low current down to <1 μA. We show that the switching characteristics differ considerably from those typically reported for larger current range (>15 μA), which we relate as intrinsic to soft-breakdown (SBD) regime. We evidence a larger impact of the used switching-oxide in this current range, due to lower density of oxygen-vacancy (V<subscript>o</subscript>) defects in the SBD regime. In this respect, deep resetting and large memory window may be achieved using the stoichiometric Al<subscript>2</subscript>O<subscript>3</subscript> material due to efficient V<subscript>o</subscript> annihilation, although no complete erasure of the conductive-filament (CF) is obtained. We finally emphasize that the conduction may be described by a quantum point-contact (QPC) model down to very low current level where only a few V<subscript>o</subscript> defects compose the QPC constriction. The large switching variability inherent to this latter aspect is mitigated by CF shape tuning through adequate engineering of an Al<subscript>2</subscript>O<subscript>3</subscript>\HfO<subscript>2</subscript> bilayer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 98776667
- Full Text :
- https://doi.org/10.1063/1.4896841