On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime.

In this article, we investigate extensively the bipolar-switching properties of Al₂O₃- and HfO₂- based resistive-switching memory cells operated at low current down to <1 μA. We show that the switching characteristics differ considerably from those typically reported for larger current range (>15 μA), which we relate as intrinsic to soft-breakdown (SBD) regime. We evidence a larger impact of the used switching-oxide in this current range, due to lower density of oxygen-vacancy (V_o) defects in the SBD regime. In this respect, deep resetting and large memory window may be achieved using the stoichiometric Al₂O₃ material due to efficient V_o annihilation, although no complete erasure of the conductive-filament (CF) is obtained. We finally emphasize that the conduction may be described by a quantum point-contact (QPC) model down to very low current level where only a few V_o defects compose the QPC constriction. The large switching variability inherent to this latter aspect is mitigated by CF shape tuning through adequate engineering of an Al₂O₃\HfO₂ bilayer. [ABSTRACT FROM AUTHOR]