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Optimization of the Output Efficiency of GaN Nanowire Piezoelectric Nanogenerators by Tuning the Free Carrier Concentration.
- Source :
- Advanced Energy Materials; Nov2014, Vol. 4 Issue 16, pn/a-N.PAG, 7p
- Publication Year :
- 2014
-
Abstract
- Carrier concentration in a piezoelectric semiconductor greatly affects alternating current (AC) piezoelectric nanogenerators (NGs) because of the carrier screening effect on the piezoelectric potential. The output performance of a series of NGs is investigated by tuning the Si dopant concentration in GaN nanowires. The results show a strong carrier screening effect that degrades output performance for high doping concentrations but results in high output power for low doping concentrations. [ABSTRACT FROM AUTHOR]
- Subjects :
- SILICON
GALLIUM nitride
NANOWIRES
PIEZOELECTRICITY
MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 16146832
- Volume :
- 4
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Advanced Energy Materials
- Publication Type :
- Academic Journal
- Accession number :
- 99516795
- Full Text :
- https://doi.org/10.1002/aenm.201400392