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Exfoliated multilayer MoTe2 field-effect transistors.
- Source :
- Applied Physics Letters; 11/10/2014, Vol. 105 Issue 19, p1-3, 3p, 3 Graphs
- Publication Year :
- 2014
-
Abstract
- The properties of multilayer exfoliated MoTe<subscript>2</subscript> field-effect transistors (FETs) on SiO<subscript>2</subscript> were investigated for channel thicknesses from 6 to 44 monolayers (MLs). All transistors showed p-type conductivity at zero back-gate bias. For channel thicknesses of 8 ML or less, the transistors exhibited ambipolar characteristics. ON/OFF current ratio was greatest, 1 × 10<superscript>5</superscript>, for the transistor with the thinnest channel, 6 ML. Devices showed a clear photoresponse to wavelengths between 510 and 1080 nm at room temperature. Temperature-dependent current-voltage measurements were performed on a FET with 30 layers of MoTe2 . When the channel is turned-on and p-type, the temperature dependence is barrier-limited by the Au/Ti/MoTe2 contact with a hole activation energy of 0.13 eV. A long channel transistor model with Schottky barrier contacts is shown to be consistent with the common-source characteristics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 105
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 99538712
- Full Text :
- https://doi.org/10.1063/1.4901527