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Tunable Dirac Electron and Hole Self-Doping of TopologicalInsulators Induced by Stacking Defects.
- Source :
- Nano Letters; Jun2015, Vol. 15 Issue 6, p3840-3844, 5p
- Publication Year :
- 2015
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 15
- Issue :
- 6
- Database :
- Supplemental Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 103152661
- Full Text :
- https://doi.org/10.1021/acs.nanolett.5b00625