Cite
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures.
MLA
Avit, Geoffrey, et al. “GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures.” Crystal Growth & Design, vol. 16, no. 5, May 2016, pp. 2509–13. EBSCOhost, https://doi.org/10.1021/acs.cgd.5b01244.
APA
Avit, G., André, Y., Bougerol, C., Castelluci, D., Dussaigne, A., Ferret, P., Gaugiran, S., Gayral, B., Gil, E., Yann Lee, Ramdani, M. R., Roche, E., & Trassoudaine, A. (2016). GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures. Crystal Growth & Design, 16(5), 2509–2513. https://doi.org/10.1021/acs.cgd.5b01244
Chicago
Avit, Geoffrey, Yamina André, Catherine Bougerol, Dominique Castelluci, Amélie Dussaigne, Pierre Ferret, Stéphanie Gaugiran, et al. 2016. “GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures.” Crystal Growth & Design 16 (5): 2509–13. doi:10.1021/acs.cgd.5b01244.