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Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors.
- Source :
- Chemistry of Materials; 6/12/2018, Vol. 30 Issue 11, p3819-3826, 8p
- Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 08974756
- Volume :
- 30
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- Chemistry of Materials
- Publication Type :
- Academic Journal
- Accession number :
- 130139211
- Full Text :
- https://doi.org/10.1021/acs.chemmater.8b01091