Kx[Bi4–xMnxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor.

Details

Language :

English

ISSN :

00027863

Volume :

141

Issue :

42

Database :

Supplemental Index

Journal :

Journal of the American Chemical Society

Publication Type :

Academic Journal

Accession number :

144889027

Full Text :

https://doi.org/10.1021/jacs.9b08674