Insights into the storage mechanism of VS4 nanowire clusters in aluminum-ion battery.

As promising electrode materials for aluminum-ion batteries (AIBs), transition metal sulfides have attracted significant attention. However, the relative low energy density and poor rate property restrict their further applications. Herein, channels-rich VS 4 nanowire clusters were synthesized via an amine ions-assisted method. When assessed as a cathode for rechargeable AIB, the VS 4 nanowire clusters exhibit superior electrochemical performances, specifically, outstanding rate property (103.32 mAh g^-1 at 800 mA g^-1), good cycling stability and a high reversible capacity of 252.51 mAh g^-1 (at 100 mA g^-1). Moreover, ex-situ X-ray diffraction (XRD) and in-situ Raman techniques reveal that the as-prepared VS 4 nanowire clusters have stable channels-rich structures, which is favorable for the mass transfer in electrochemical reaction. A mechanism of intercalation is proposed for the electrochemical process. This work takes a step toward the development of high-performance electrode materials for AIBs and provides new insights into the chemistry of AIBs for electrochemical energy storage. Three-dimensional channels-rich VS 4 nanowire clusters were assessed as a rechargeable aluminum-ion batteries (AIBs) cathode for the first time. The VS 4 nanowire clusters exhibit superior electrochemical performance for Al³⁺ storage among existing cathode materials, exhibiting a high reversible capacity of 252.51 mAh g^-1 (at 100 mA g^-1), outstanding rate property (103.32 mAh g^-1 at 800 mA g^-1) and good cycling stability. Through ex-situ X-ray diffraction and in-situ Raman techniques, the insertion/extraction mechanism of VS 4 in AIBs are elucidated. Image 1 • Three-dimensional channels-rich VS 4 nanowire clusters were assessed as a rechargeable aluminum-ion batteries (AIBs) cathode for the first time. • The VS 4 nanowire clusters exhibit superior electrochemical performance for Al³⁺ storage among existing cathode materials, exhibiting a high reversible capacity of 252.51 mAh g^-1 (at 100 mA g^-1), outstanding rate property (103.32 mAh g^-1 at 800 mA g^-1) and good cycling stability. • Through ex-situ X-ray diffraction and in-situ Raman techniques, the insertion/extraction mechanism of VS 4 in AIBs are elucidated. [ABSTRACT FROM AUTHOR]