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Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.
- Source :
- ACS Applied Materials & Interfaces; 2/17/2021, Vol. 13 Issue 6, p7725-7734, 10p
- Publication Year :
- 2021
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 13
- Issue :
- 6
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 148841343
- Full Text :
- https://doi.org/10.1021/acsami.0c19483