Back to Search
Start Over
High-Mobility MOCVD β‑Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium.
- Source :
- Crystal Growth & Design; 6/1/2022, Vol. 22 Issue 6, p3896-3904, 9p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 22
- Issue :
- 6
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 157214468
- Full Text :
- https://doi.org/10.1021/acs.cgd.2c00290