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3D flower-like hollow CuS@PANI microspheres with superb X-band electromagnetic wave absorption.
- Source :
- Journal of Materials Science & Technology; Nov2022, Vol. 126, p141-151, 11p
- Publication Year :
- 2022
-
Abstract
- • Novel 3D flower-like hollow CuS@PANI micropheres have been successfully synthesized via a solvothermal process followed by in-situ polymerization. • The excellent reflection loss of 3D flower-like hollow CuS@PANI micropheres is −71.1 dB with a matching thickness of 2.75 mm. • The effective absorption bandwidth of 3D flower-like hollow CuS@PANI micropheres almost cover the whole X-band. Superior electromagnetic (EM) wave absorption properties in 8.2–12.4 GHz (X -band) can be obtained via the effective combination of polyaniline (PANI) and CuS. Herein, novel 3D flower-like hollow CuS@PANI microspheres were fabricated by a solvothermal process followed by in-situ polymerization. EM wave absorption properties of 3D flower-like hollow CuS@PANI microspheres in X -band were systematically studied, indicating the minimum reflection loss (RL min) of -71.1 dB and effective absorption bandwidth (EAB) covering 81% of test frequency range were achieved with a thickness of 2.75 mm. Excellent EM wave absorption properties of 3D flower-like hollow CuS@PANI microspheres were mainly ascribed to outstanding impedance matching characteristic and dielectric loss capability (conduction loss, interfacial polarization loss and dipole polarization loss). Moreover, due to the distinctive flower-like hollow structure of CuS@PANI microspheres, an additional wave-absorbing mechanism was provided by increasing the transmission paths of EM waves. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTROMAGNETIC wave absorption
MICROSPHERES
IMPEDANCE matching
DIELECTRIC loss
Subjects
Details
- Language :
- English
- ISSN :
- 10050302
- Volume :
- 126
- Database :
- Supplemental Index
- Journal :
- Journal of Materials Science & Technology
- Publication Type :
- Periodical
- Accession number :
- 157690019
- Full Text :
- https://doi.org/10.1016/j.jmst.2022.03.016