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Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications.

Authors :
He, Rui
Liu, Naixin
Gao, Yaqi
Chen, Renfeng
Zhang, Siyao
Yuan, Hongfeng
Duo, Yiwei
Xu, Jintong
Ji, Xiaoli
Yan, Jianchang
Wang, Junxi
Liu, Jianguo
Li, Jinmin
Wei, Tongbo
Source :
Nano Energy; Dec2022:Part A, Vol. 104, pN.PAG-N.PAG, 1p
Publication Year :
2022

Abstract

High quality AlGaN material growth and chip fabrication of monolithically integrated solar blind light-emitting diodes (LEDs), waveguides and photodetectors (PDs) on an AlGaN multi-quantum wells (MQWs) wafer are presented. The strong light constraint of waveguides is confirmed, in virtue of predominant ultraviolet transverse magnetic (TM) modes in transverse transmission. Unaffected by the ambient lighting, the PDs demonstrate sufficient photosensitivity to the optical signal traveling along waveguides owing to the emission-responsion spectral overlap. When the LEDs are operated at 20 mA current, the photo-to-dark current ratio (PDCR) in the PDs is up to seven orders of magnitude, which is higher than previously reported values for self-driven nitride PDs. The responsivity, specific detectivity and external quantum efficiency (EQE) of self-driven PDs are 186 A/W, 2.54 × 10<superscript>14</superscript> Jones and 8.4 × 10<superscript>4%</superscript>, respectively. Benefiting from the effective optical isolation, the light crosstalk between adjacent devices is effectively reduced about 70%. The self-driven PDs exhibit 127/131 ns (rise/decay) rapid response in the on-chip communication. This work opens a pathway to drastically improve the ultraviolet-C (UVC) monolithically integrated systems and extends the fields of application in solar-blind communication. [Display omitted] • UVC photoelectric integrated chips based on high quality AlGaN MQWs are successfully fabricated. • The AlGaN waveguide is designed to strengthen optical constraints, enabling lower optical crosstalk. • Integrated UVC on-chip communication is demonstrated with high-speed response. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
22112855
Volume :
104
Database :
Supplemental Index
Journal :
Nano Energy
Publication Type :
Academic Journal
Accession number :
161013826
Full Text :
https://doi.org/10.1016/j.nanoen.2022.107928