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Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2.

Authors :
Dahlberg, Hannes
Persson, Anton E. O.
Athle, Robin
Wernersson, Lars-Erik
Source :
ACS Applied Electronic Materials; 12/27/2022, Vol. 4 Issue 12, p6357-6363, 7p
Publication Year :
2022

Details

Language :
English
ISSN :
26376113
Volume :
4
Issue :
12
Database :
Supplemental Index
Journal :
ACS Applied Electronic Materials
Publication Type :
Academic Journal
Accession number :
161057126
Full Text :
https://doi.org/10.1021/acsaelm.2c01483