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Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2.
- Source :
- ACS Applied Electronic Materials; 12/27/2022, Vol. 4 Issue 12, p6357-6363, 7p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 26376113
- Volume :
- 4
- Issue :
- 12
- Database :
- Supplemental Index
- Journal :
- ACS Applied Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 161057126
- Full Text :
- https://doi.org/10.1021/acsaelm.2c01483