p‑Type High-Performance WSi2N4 MOSFETs with the Ultrashort Scale of Sub‑5 nm.

Details

Language :

English

ISSN :

26376113

Volume :

5

Issue :

12

Database :

Supplemental Index

Journal :

ACS Applied Electronic Materials

Publication Type :

Academic Journal

Accession number :

174470608

Full Text :

https://doi.org/10.1021/acsaelm.3c01216