Channel Thickness-Dependent Degradation of Field-Effect Mobility in Multilayer MoS2 Transistors.

Details

Language :

English

ISSN :

26376113

Volume :

6

Issue :

1

Database :

Supplemental Index

Journal :

ACS Applied Electronic Materials

Publication Type :

Academic Journal

Accession number :

175007256

Full Text :

https://doi.org/10.1021/acsaelm.3c01461