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An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions.
- Source :
- ACS Applied Materials & Interfaces; 5/1/2024, Vol. 16 Issue 17, p22166-22176, 11p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 16
- Issue :
- 17
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 176991463
- Full Text :
- https://doi.org/10.1021/acsami.4c02294