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Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review.

Authors :
Alan Sibu, G.
Gayathri, P.
Akila, T.
Marnadu, R.
Balasubramani, V.
Source :
Nano Energy; Jun2024, Vol. 125, pN.PAG-N.PAG, 1p
Publication Year :
2024

Abstract

In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky barrier diode research, highlighting a surge in interest in tailored filaments for thin films, photovoltaic cells, and advanced electronics. The fundamental principles of MIS functionalization on the intermediate insulator layer within the MIS structure are detailed, followed by a comprehensive discussion of approaches to MIS-based diode fabrication, meticulously addressing specific details of metal, insulator and semiconductor layers. This review delves into bespoke device manufacturing methods, underscoring their significance in the scientific landscape. It examines principal materials used in production, focusing on optical, electrical applications explores the evolution of insulating materials, doping effects, manufacturing technologies and potential device applications. Challenges in MIS diode manufacturing are outlined, exploring various techniques, their advantages and disadvantages. JNSP thin film coating emerges as a preferred technique due to its cost-effectiveness, ease of handling, and non-toxic nature. From our comprehensive review, it is evident that transition metals are preferred materials in previous research. The article concludes by addressing future perspectives, guiding novel advancements and contemplating applications of bespoke filaments in optoelectronic devices and applications. This holistic exploration aims to contribute to the ongoing discourse and evolution of MIS-based devices across diverse fields. [Display omitted] • 50 years research of MIS Schottky barrier diodes: Focused on, photovoltaic applications and advanced electronics. • Key challenges associated to fabricate the MIS SBDs methods are addressed. • Recent developments of optoelectronic devices and optimal materials for the fabricate MIS structures were reviewed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
22112855
Volume :
125
Database :
Supplemental Index
Journal :
Nano Energy
Publication Type :
Academic Journal
Accession number :
177420901
Full Text :
https://doi.org/10.1016/j.nanoen.2024.109534