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Programmable Retention Characteristics in MoS2‑Based Atomristors for Neuromorphic and Reservoir Computing Systems.
- Source :
- ACS Nano; 6/4/2024, Vol. 18 Issue 22, p14327-14338, 12p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 19360851
- Volume :
- 18
- Issue :
- 22
- Database :
- Supplemental Index
- Journal :
- ACS Nano
- Publication Type :
- Academic Journal
- Accession number :
- 177675270
- Full Text :
- https://doi.org/10.1021/acsnano.4c00333