Investigators at Russian Academy of Sciences Report Findings in Nanotubes (Spin Properties of Silicon-germanium Nanotubes).

Researchers at the Russian Academy of Sciences have conducted a study on the spin properties of silicon-germanium nanotubes. They found that these nanotubes have a semiconductor type of band structure with a bandgap of approximately 0.35 eV. The researchers also discovered that mechanical actions, such as twisting or loading the nanotubes, can control the spin-orbit gap energies, which may have applications in spintronics for controlling spin transport. This research was supported by the Russian Science Foundation and has been peer-reviewed. [Extracted from the article]