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Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors.
- Source :
- ACS Applied Materials & Interfaces; 11/27/2024, Vol. 16 Issue 47, p65046-65057, 12p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 16
- Issue :
- 47
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 181207836
- Full Text :
- https://doi.org/10.1021/acsami.4c15598