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Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing.
- Source :
- Nano Letters; 2/5/2024, Vol. 25 Issue 5, p1831-1837, 7p
- Publication Year :
- 2025
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 25
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 182829363
- Full Text :
- https://doi.org/10.1021/acs.nanolett.4c04771