ELECTRICAL SWITCHING WITH MEMORY EFFECT IN THIN La0,67Ca0,33MnO3 FILMS.

Authors :: Kiprijanovič, O.
Lučun, A.
Ašmontas, S.
Anisimovas, F.
Butkutė, R.
Maneikis, A.
SužiedėIis, A.
Vengalis, B.
Source :: International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2006, p46-49, 4p
Publication Year :: 2006
Abstract: The article investigates the electrical switching with memory effect in thin films. It was observed that the metastable high resistive states induced by direct current decreased under applied strong electric field in films with structural inhomogeneities. The surface analysis of cleaved magnesium oxide substrates using atomic force microscope (AFM) revealed terrace-like structures with height of the steps ranging from 5 to 35 millimicron.

Subjects :: ATOMIC force microscopy
THIN films
DIRECT currents
SWITCHING circuits
ELECTRIC fields
SWITCHING theory

Language :: English
ISSN :: 1822508X
Database :: Supplemental Index
Journal :: International Conference: Radiation Interaction with Material & Its Uses in Technologies
Publication Type :: Conference
Accession number :: 27019686

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