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Traditional Hot-Electron MOS Devices for Novel Optoelectronic Applications.
- Source :
- Nonequilibrium Carrier Dynamics in Semiconductors; 2006, p265-268, 4p
- Publication Year :
- 2006
-
Abstract
- We report the realization of highly-efficient light emitting MOS devices which are based on hot-electron excitation of rare-earth ions implanted into SiO2. The implantation of Gd+ and Tb+ ions yields emission wavelengths of 316 nm and 541 nm with external quantum efficiencies up to 1% and 16%, respectively. The observed threshold electric fields for observing electroluminescence are in accordance with the injection of hot electrons via Fowler-Nordheim tunneling into SiO2 at field strengths in the range of 8-9 MV/cm. The presence of different electroluminescence bands of the Tb-implanted devices allows us to study details of the hot-electron excitation process. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISBNs :
- 9783540365877
- Database :
- Supplemental Index
- Journal :
- Nonequilibrium Carrier Dynamics in Semiconductors
- Publication Type :
- Book
- Accession number :
- 33875568
- Full Text :
- https://doi.org/10.1007/978-3-540-36588-4_60