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Resistive Switching Memory Devices Composed of Binary Transition Metal Oxides Using Sol−Gel Chemistry.
- Source :
- Langmuir; Apr2009, Vol. 25 Issue 8, p4274-4278, 5p
- Publication Year :
- 2009
Details
- Language :
- English
- ISSN :
- 07437463
- Volume :
- 25
- Issue :
- 8
- Database :
- Supplemental Index
- Journal :
- Langmuir
- Publication Type :
- Academic Journal
- Accession number :
- 37606873
- Full Text :
- https://doi.org/10.1021/la804267n