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Radiation induced defects in -doped LiF crystals.

Authors :
Somma, F.
Montereali, R.M.
Vincenti, M.A.
Polosan, S.
Secu, M.
Source :
Physics Procedia; Aug2009, Vol. 2 Issue 2, p211-221, 11p
Publication Year :
2009

Abstract

Abstract: The influence of Pb<superscript>2+</superscript> doping on the optical properties of LiF crystals before and after irradiation with X-ray was studied by using optical absorption and photoluminescence measurements. After irradiation it was observed an increase of the absorption due to primary and aggregate electronic defects together with a higher photoluminescence signals associated with the F<subscript>2</subscript> and F<subscript>3</subscript> <superscript>+</superscript> colour centres in doped samples compared with the undoped ones. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
18753892
Volume :
2
Issue :
2
Database :
Supplemental Index
Journal :
Physics Procedia
Publication Type :
Academic Journal
Accession number :
44469016
Full Text :
https://doi.org/10.1016/j.phpro.2009.07.013