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Ultra low power flow-to-frequency SOI MEMS transducer.

Authors :
André, N.
Rue, B.
Van Vynckt, D.
Francis, L.A.
Flandre, D.
Raskin, J.-P.
Source :
Procedia Engineering; Oct2010, Vol. 5, p540-543, 4p
Publication Year :
2010

Abstract

Abstract: Silicon-on-Insulator (SOI) technology, with unique properties such as harsh environment resistance and lower power consumption [1], is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane (3D) movable cantilevers and ring oscillators (RO) circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
18777058
Volume :
5
Database :
Supplemental Index
Journal :
Procedia Engineering
Publication Type :
Academic Journal
Accession number :
54677573
Full Text :
https://doi.org/10.1016/j.proeng.2010.09.166